shaanxi qunli electric co., ltd add.:no. 1 qunli road,baoji city,shaanxi,china contact:jiandong lei tel.:+86-917-6293906 fax:+86-917-6297928 sxqlljd@hotmail.com 34 features: 1. using triple-diffusion,low resistance liner process.heavy out-put curr ent,small saturation voltage drop. excellent out-put characteristic. 2. implementation of standards: gjb33 a-97, qzj840611a, qzj840611 3. use for low-speed switch, power amp lify,power adjustment,dc conversion. 4. quality class: jp, jt, jct, gs, g, g+ technical data: (ta = 25c ) specifications test condition parameter name symbols unit a b c d e collector-emitter voltage v ceo v 30 50 80 110 150 emitter-base voltage v ebo v 3 max. collector current i cm a 2.5 max. collector dissipation p cm w 25 tc:75 c junction temperature t jm c 175 storage temperature t stg c -55~+175 collector-emitter leakage current i ceo ma max.:1.5 v ce =20v collector- emitter saturation voltage drop v ce(sat) v max.:1.2 i c =1.25a,i b =0.25a dc current gain h fe min.:10 v ce =5v,i c =1.25a a b c d e collector-emitter breakdown voltage v (br)ceo v 30 50 80 110 150 i c =5ma e-base breakdown voltage v (br)ebo v 3 i e =10ma h fe colored: color brown red orange h fe 10~20 20~30 30~ outline and dimensions: 3DD60 npn silicon low fre q uenc y hi g h power transistor www.datasheet.net/ datasheet pdf - http://www..co.kr/
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